View M54522FP_146454.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI SEMICONDUCTOR
M54522P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
INPUT
IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 IN8 8 GND 9 18 O1 17 O2 16 O3 15 O4 14 O5 13 O6 12 O7 11 O8 10 COM COMMON
OUTPUT
FEATURES High breakdown voltage (BVCEO 40V) High-current driving (Ic(max) = 400mA) With clamping diodes Driving available with PMOS IC output Wide operating temperature range (Ta = -20 to +75C)
Package type 18P4G(P)
NC
1
20
NC
APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between microcomputer output and high-current or high-voltage systems
INPUT
IN1 2 IN2 3 IN3 4 IN4 5 IN5 6 IN6 7 IN7 8 IN8 9 GND 10
19 O1 18 O2 17 O3 16 O4 15 O5 14 O6 13 O7 12 O8 11 COM COMMON
OUTPUT
FUNCTION The M54522P and M54522FP each have eight circuits consisting of NPN Darlington transistors. These ICs have resistance of 20k between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum. The M54522FP is enclosed in a molded small flat package, enabling space-saving design.
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
COM OUTPUT 20K INPUT
20K
2K The eight circuits share the COM and GND.
GND
The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54522P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board
(Unless otherwise noted, Ta = -20 ~ +75C)
Conditions Output, H Current per circuit output, L
Ratings -0.5 ~ +40 400 -0.5 ~ +40 400 40 1.79(P)/1.10(FP) -20 ~ +75 -55 ~ +125
Unit V mA V mA V W C C
RECOMMENDED OPERATING CONDITIONS
Symbol VO Output voltage Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) "H" input voltage "L" input voltage Parameter
(Unless otherwise noted, Ta = -20 ~ +75C)
Limits min 0 0 0 8 4 0 typ -- -- -- -- -- -- max 40 400
Unit V
IC
VIH VIL
Duty Cycle P : no more than 7% FP : no more than 5% Duty Cycle P : no more than 30% FP : no more than 20% IC 400mA IC 200mA
mA 200 30 0.5 V V
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE (sat) II VF IR hFE Parameter
(Unless otherwise noted, Ta = -20 ~ +75C)
Test conditions ICEO = 100A VI = 8V, IC = 400mA VI = 4V, IC = 200mA VI = 17V IF = 400mA VR = 40V VCE = 4V, IC = 300mA, Ta = 25C
Limits min 40 -- -- 0.3 -- -- 1000 typ+ -- 1.15 0.95 0.85 1.5 -- 8000 max -- 2.4 1.6 1.8 2.4 100 --
Unit V V mA V A --
Collector-emitter breakdown voltage Collector-emitter saturation voltage Input current Clamping diode forward voltage Clamping diode reverse current DC amplification factor
+ : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C)
Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 30 930 max -- -- Unit ns ns
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54522P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TIMING DIAGRAM
VO Measured device OPEN PG 50 CL OUTPUT
NOTE 1 TEST CIRCUIT
INPUT
50%
RL
50%
INPUT
OUTPUT 50% 50%
ton
(1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VIN = 0 to 8V (2) Input-output conditions : RL = 25, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
toff
TYPICAL CHARACTERISTICS
Output Saturation Voltage Collector Current Characteristics 500
M54522P VI = 4V
Thermal Derating Factor Characteristics 2.0
Power dissipation Pd (W)
1.5
M54522FP
Collector current Ic (mA)
400
300
1.0
200
Ta = 25C
0.5
100
Ta = 75C Ta = -20C
0
0
25
50
75
100
0
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (C) Duty-Cycle-Collector Characteristics (M54522P) 500 100
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54522P) 500
Collector current Ic (mA)
300
Collector current Ic (mA)
400
400
300

200

200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C
100
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54522P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Duty-Cycle-Collector Characteristics (M54522FP) 500 500
Duty-Cycle-Collector Characteristics (M54522FP)
Collector current Ic (mA)
Collector current Ic (mA)
400
400
300

300
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit.

*Ta = 75C
100
100
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%) DC Amplification Factor Collector Current Characteristics 105
7 5 3 2 VCE = 4V Ta = 25C
Duty cycle (%)
Grounded Emitter Transfer Characteristics 400
VCE = 4V
DC amplification factor hFE
Collector current Ic (mA)
300
104
7 5 3 2
Ta = 75C
200
Ta = 75C
103
7 5 3 2
Ta = -20C
100
Ta = 25C Ta = -20C
102 0 10 2 3 5 7101 2 3 5 7 102 2 3 5 7 103 Collector current Ic (mA)
0
0
1
2
3
4
Input voltage VI (V)
Input Characteristics 2.0 Forward bias current IF (mA) 400
Clamping Diode Characteristics
Input current II (mA)
1.5
Ta = -20C
300
1.0
Ta = 25C Ta = 75C
200
0.5
100
Ta = 75C Ta = 25C Ta = -20C
0
0
5
10
15
20
25
0
0
0.5
1.0
1.5
2.0
Input voltage VI (V)
Forward bias voltage VF (V)
Aug. 1999

▲Up To Search▲

Price & Availability of M54522FP

	To Download M54522FP Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .